MRF6V3090NR1 MRF6V3090NR5
MRF6V3090NBR1 MRF6V3090NBR5
11
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS ? 470--860 MHz BROADBAND REFERENCE CIRCUIT
ηD
Gps
24
450
0
60
850
23
21
19
50
=4.5W
40
9W
18 W
30
f, FREQUENCY (MHz)
Figure 21. Single--Carrier DVB--T (8k OFDM) Power Gain and Drain
Efficiency versus Frequency (Broadband Reference Circuit)
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
22
20
900
20
18
104.5 W
500 550 600 650 700 750 800
VDD
=50Vdc,IDQ
= 450 mA, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
Pout
18 W
9W
12
-- 4 5
0
f, FREQUENCY (MHz)
Figure 22. Single--Carrier DVB--T (8k OFDM) Output PAR and IMD
Shoulder versus Frequency (Broadband Reference Circuit)
450
-- 1 0
-- 2 0
-- 3 0
18 W
-- 4 0
OUTPUT PAR (dB)
Pout
=4.5W
9W
-- 1 5
VDD
=50Vdc,IDQ
= 450 mA, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
10
7
6
5
4
3
495 540 585 630 675 720 765 810 900855
18 W
-- 2 5
4.5 W
9W
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
26
VDD
=50Vdc,IDQ
= 450 mA
25
Pulse Width = 100
μsec, 10% Duty Cycle
0
70
Pout, OUTPUT POWER (WATTS) PULSED
Figure 23. Pulsed Power Gain and Drain Efficiency
versus Output Power (Broadband Reference Circuit)
1
50
470 MHz
40
30
2030
Gps
ηD
60
24
23
21
20
19
10 100 200
620 MHz
η
D
,
DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
PAR
IMD(1)
IMD, INTERMODULATION
DISTORTION SHOULDER (dBc)
8
9
11
-- 5
-- 3 5
22
10
860 MHz
620 MHz
740 MHz
470 MHz
860 MHz
740
MHz
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